Low power analog frontend for ISFET sensor readout

Zhang, Jun-Rui (Nanolab, EPFL, Lausanne, Switzerland) ; Bellando, Francesco (Nanolab, EPFL, Lausanne, Switzerland) ; Garcia Cordero, Erick Antonio (Nanolab, EPFL, Lausanne, Switzerland) ; Mazza, Marco (School of Engineering and Architecture (HEIA-FR), HES-SO // University of Applied Sciences Western Switzerland) ; Fernandez-Bolanos Badia, Montserrat (Nanolab, EPFL, Lausanne, Switzerland) ; Ionescu, Aileen Margaret (School of Engineering and Architecture (HEIA-FR), HES-SO // University of Applied Sciences Western Switzerland)

A low power analog frontend (AFE) for Ion-Sensitive Field effect Transistor sensor readout is presented. The AFE is demonstrated with off-the-shelf components. It includes a biasing circuit to bias an ISFET sensor, a noise rejecting current readout circuit, and a sigma-delta analog to digital converter. The digital output can be interpreted by a simple counter to acquire the ion-concentration in a drop of liquid on top of the calibrated ISFET sensor. A PH sensing experiment is performed to validate the AFE. Total power consumption is less than 40 µW with 1.8 V supply.


Keywords:
Conference Type:
short paper
Faculty:
Ingénierie et Architecture
School:
HEIA-FR
Institute:
IPRINT - Institut de printing
Subject(s):
Ingénierie
Publisher:
Vienna, Austria, 15-19 July 2018
Date:
2018-07
Vienna, Austria
15-19 July 2018
Pagination:
2 p.
Published in:
Proceedings of IMCS 2018, 17th International Meeting on Chemical Sensors , 15-19 July 2018, Vienna, Austria
DOI:
ISBN:
978-3-9816876-9-9
External resources:
Appears in Collection:



 Record created 2019-02-12, last modified 2019-03-05

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