Strain relaxation and critical temperature in epitaxial ferroelectric Pb(Zr0.20Ti0.80)O3 thin films

Gariglio, Stefano (DPMC, University of Geneva, Geneva, Switzerland) ; Stucki, N. (DPMC, University of Geneva, Geneva, Switzerland) ; Triscone, Jean-Marc (DPMC, University of Geneva, Geneva, Switzerland) ; Triscone, Gilles (School of Engineering, Architecture and Landscape (hepia), HES-SO // University of Applied Sciences Western Switzerland)

Strain relaxation and the ferroelectric critical temperature were investigated in a series of epitaxial Pb(Zr0.20Ti0.80)O-3 thin films of different thicknesses grown on metallic 0.5% Nb-doped SrTiO3 substrates. Detailed x-ray diffraction studies reveal that strain relaxation progressively occurs via misfit dislocations as the film thickness is increased from fully coherent films (for films below 150 A) to essentially relaxed films (for thicknesses above typically 800 A). It is found that this change in the strain state does not modify the ferroelectric critical temperature which is found for all the samples to be around 680 degrees C, a value much higher than the bulk.


Article Type:
scientifique
Faculty:
Ingénierie et Architecture
School:
HEPIA - Genève
Institute:
inSTI - Institut des Sciences et Technologies industrielles
Date:
2007-05
Pagination:
3 p.
Published in:
Applied Physics Letters
Numeration (vol. no.):
2007, vol. 90, article no. 202905
DOI:
ISSN:
0003-6951
Appears in Collection:

Note: The status of this file is: restricted


 Record created 2020-05-01, last modified 2020-05-29

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