Application of stencil masks for ion beam lithographic patterning

Brun, Sébastien (School of Engineering – HE-Arc Ingénierie, HES-SO // University of Applied Sciences Western Switzerland) ; Savu, Andreea Veronica (Laboratoire des Microsystèmes (LMIS), EPFL, Lausanne, Switzerland) ; Schintke, Silvia (School of Management and Engineering Vaud, HES-SO // University of Applied Sciences Western Switzerland) ; Guibert, Edouard (School of Engineering – HE-Arc Ingénierie, HES-SO // University of Applied Sciences Western Switzerland) ; Keppner, Herbert (School of Engineering – HE-Arc Ingénierie, HES-SO // University of Applied Sciences Western Switzerland) ; Brugger, Jürgen (Laboratoire des Microsystèmes (LMIS), EPFL, Lausanne, Switzerland) ; Whitlow, Harry J. (School of Engineering – HE-Arc Ingénierie, HES-SO // University of Applied Sciences Western Switzerland)

The application of Au/Si3N4 stencil masks for the transfer of patterns using different MeV-ion beams with various substrates has been investigated. The techniques investigated were namely, conventional lithography with positive- and negative-tone resist polymers, oxygen ion-induced etching of PTFE and patterning using an etch-stop in silicon. We demonstrate that using different well-known microtechnology material-modification techniques, patterns can be transferred using stencil masks and broad ion beams to nanomachining scenarios. In the case of the etch-stop process; writing of 3D micropatterns with different height levels was achieved using a broad beam. The stencil masks were found to be durable with no obvious deterioration and well suited for exposure of large areas.


Keywords:
Article Type:
scientifique
Faculty:
Ingénierie et Architecture
School:
HE-Arc Ingénierie
HEIG-VD
Institute:
COMATEC - Institut de Conception, Matériaux, Emballage & Conditionnement
Date:
2013-07
Pagination:
4 p.
Published in:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Numeration (vol. no.):
2013, vol. 306, pp. 292-295
DOI:
ISSN:
0168-583X
Appears in Collection:

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 Record created 2020-06-30, last modified 2020-06-30

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