Imaging size-selected silicon clusters with a low-temperature scanning tunneling microscope

Messerli, Stéphane (Université de Lausanne (UNIL), Lausanne, Switzerland) ; Schintke, Silvia (Université de Lausanne (UNIL), Lausanne, Switzerland) ; Morgenstern, Karina (Université de Lausanne (UNIL), Lausanne, Switzerland) ; Sanchez, Antonio (Université de Lausanne (UNIL), Lausanne, Switzerland) ; Heiz, Ueli (Université de Lausanne (UNIL), Lausanne, Switzerland) ; Schneider, Wolf-Dieter (Université de Lausanne (UNIL), Lausanne, Switzerland)

Size-selected Si30 and Si39 clusters produced by a laser vaporization cluster source are deposited on the Ag(111) surface at room temperature and at liquid-nitrogen temperature respectively. Subsequently, the sample is transferred at low temperature (120 K) in a separate mobile ultrahigh vacuum chamber (vacuum-suitcase) from the cluster source to a low-temperature scanning tunneling microscope (STM). Soft landing of the supported clusters is indicated by the following observations: (i) atomic-resolution images taken at low bias voltages show transparent Si clusters and an unperturbed Ag(111) substrate; (ii) manipulation experiments on the supported clusters and subsequently taken atomic-resolution images show a defect-free Ag(111) surface. In spite of the fact that the clusters are mass-selected in the gas phase, a statistical analysis of the STM images indicates a finite size-distribution on the support. This finding is attributed to the presence of different isomers and/or cluster orientations on the surface.


Note: SCHINTKE, Silvia est une chercheuse à la HES-SO, HEIG-VD, depuis 2002.


Mots-clés:
Type d'article:
scientifique
Faculté:
Ingénierie et Architecture
Ecole:
HEIG-VD
Institut:
COMATEC - Institut de Conception, Matériaux, Emballage & Conditionnement
Date:
2000-10
Pagination:
8 p.
Publié dans:
Surface Science
Numérotation (vol. no.):
2000, vol. 465, no. 3, pp. 331-338
DOI:
ISSN:
0039-6028
Le document apparaît dans:

Note: The status of this file is: restricted


 Notice créée le 2021-02-12, modifiée le 2021-02-19

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