The technological evolution of power MOS devices to be employed in the area of power electronics is oriented, as far as concerns the low-power range, toward the integration of various devices into a single chip. Multipower BCD is a new integrated technology, developed by SGS, which allows the integration of multiple isolated power MOS devices together with bipolar and C-MOS signal stages into the same chip. The paper presents the modelling and simulation of a power D-MOS device implemented in multipower BCD.
Titre
Modeling and simulation of a power MOS device integrated in multi-power BCD technology for switched mode applications
Date
1988-06
Publié dans
Smart design for power conversion : proceedings of the PCI-Munich 85'
Editeur
Munich, Germany, 6-9 june 1988
Pagination
14 p.
Présenté à
PCI-Munich 85', Munich, Germany, 1988-06-06, 1988-06-09
ISBN
0-931033-09-8
Type de papier
published full paper
Domaine
Ingénierie et Architecture
Ecole
HEIG-VD
Institut
iE - Institut des Energies
Note
CARPITA, Mauro est chercheur à la HES-SO, HEIG-VD, depuis 2003.
Cette publication a été rédigée par un membre de l’ancien institut IESE - Institut d'Energie et Systèmes Electriques.
